Acta Scientific Applied Physics

Research Article Volume 3 Issue 7

Features of the Electrical and Optical Characteristics of the Original and Irradiated by γ-quanta 𝑪𝒐𝟔𝟎 InGaN/GaN LEDs with Quantum Wells

RM Vernydub1, OI Kyrylenko1, OV Konoreva2, OV Melnychenko4, TI Mosiuk1*, DP Stratilat3 and VP Tartachnyk3

1Ukrainian State Mykhailo Drahomanov University, Kyiv, Ukraine
2E.O. Paton Electric Welding Institute of the NAS of Ukraine, Kazymyr Malevych St., Ukraine
3Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
4Institute of Physical Chemistry, NAS of Ukraine, Kyiv, Ukraine

*Corresponding Author: TI Mosiuk, Ukrainian State Mykhailo Drahomanov University, Kyiv, Ukraine.

Received: June 16, 2023; Published: June 27, 2023


The results of studies of the electrical and optical characteristics of the original and irradiated by γ-quanta 𝐶𝑜60 of high-efficiency InGaN/GaN blue light-emitting diodes with quantum wells are presented. Possible mechanisms for the appearance of singularities in current-voltage characteristics at low temperatures (T ≤ 180 °K) are discussed. It was found that the process of radiative degradation of electroluminescence is accompanied by an increase in the carrier temperature Te and an increase in the activation energy of electroluminescence.

Keywords: InGaN/GaN; Electrical and Optical Characteristics; Irradiated by γ-quanta 𝐶𝑜60


  1. Shuji Nakamura. “InGaN quantum-well structure blue LEDs and LDs”. Journal of Luminescence (1997): 72-74, 55-58.
  2. F Schubert. Moscow, (2008).
  3. VV Lundyn., et al. Journal of Technical Physics 36 (2010): 92-95.
  4. AF Tsatsulnykov., et al. “«МОСТ ЧЕРЕЗ «ЗЕЛЕНУЮ ДОЛИНУ» ПО ПУТИ К RGB ИСТОЧНИКАМ БЕЛОГО СВЕТА”. Journal of Technical Physics 44 (2010): 41-44.
  5. Daisuke Iida., et al. “Demonstration of low forward voltage InGaN-based red LEDs”. Applied Physics Express 13 (2020): 031001-1 - 031001-4.
  6. NI Bochkareva., et al. “Влияние глубоких центров на конфайнмент носителей в квантовых ямах InGaN/GaN и эффективность светодиодов”. Journal of Technical Physics 52 (2018): 796-803.
  7. Seung-Hye Baek., et al. “High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel”. Scientific Reports 9 (2019): 13654.
  8. AS Hedzir., et al. “Influence of electron irradiation on the electroluminescence spectra of white InGaN light emitting diodes”. Ukrainian Journal of Physical Optics 19 (2018): 159-163.
  9. NI Bochkareva., et al. Journal of Physics and Technology of Semiconductors 6 (2010): 822-828.
  10. Yen-Kuang Kuo., et al. “Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers”. Applied Physics Letters 100 (2012): 031112.
  11. Emmanouil Kioupakis., et al. “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes”. Applied Physics Letters 98 (2011): 161107.
  12. I-Lin Lu., et al. “A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method”. Journal of Applied Physics 108 (2010): 124508.
  13. Francesco Bertazzi., et al. “A numerical study of Auger recombination in bulk InGaN”. Applied Physics Letters 97 (2010): 231118.
  14. Kris T Delaney., et al. “Auger recombination rates in nitrides from first principles”. Applied Physics Letters 94 (2009): 191109.
  15. J Hader., et al. “On the importance of radiative and Auger losses in GaN-based quantum wells”. Applied Physics Letters 92 (2007): 261103.
  16. YC Shen., et al. “Auger recombination in InGaN measured by photoluminescence”. Applied Physics Letters 91 (2007): 141101.
  17. VE Borysenko., et al. “Nanoelectronics: theory and practice, Minsk” (2013).
  18. YuM Poplavko., et al. “Nanophysics, nanomaterials, nanoelectronics, Kyiv” (2012).
  19. YA Prudaev., et al. Journal of Technical Physics 51 (2017): 240-246.
  20. W Shockley. “The theory of p-n junctions in semiconductors and p-n junction transistors”. The Bell System Technical Journal 28 (1949): 435-489.
  21. SM Sze., et al. “Physics of semiconductor devises”. 4th edition, (2021).
  22. DА Zakheim., et al. А.S. 105-106.
  23. KSh Shunkeev., et al. Solid State Physics 10 (2008): 1729-1732.


Citation: TI Mosiuk., et al. “Features of the Electrical and Optical Characteristics of the Original and Irradiated by γ-quanta 𝑪𝒐𝟔𝟎 InGaN/GaN LEDs with Quantum Wells". Acta Scientific Applied Physics 3.7 (2023): 03-08.


Copyright: © 2023 TI Mosiuk., et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

News and Events

  • Certification for Review
    Acta Scientific certifies the Editors/reviewers for their review done towards the assigned articles of the respective journals.
  • Submission Timeline for Upcoming Issue
    The last date for submission of articles for regular Issues is May 30, 2024.
  • Publication Certificate
    Authors will be issued a "Publication Certificate" as a mark of appreciation for publishing their work.
  • Best Article of the Issue
    The Editors will elect one Best Article after each issue release. The authors of this article will be provided with a certificate of "Best Article of the Issue"
  • Welcoming Article Submission
    Acta Scientific delightfully welcomes active researchers for submission of articles towards the upcoming issue of respective journals.

Contact US