RM Vernydub¹, OI Kyrylenko¹, OV Konoreva², OV Melnychenko⁴, TI Mosiuk¹*, DP Stratilat³ and VP Tartachnyk³

¹Ukrainian State Mykhailo Drahomanov University, Kyiv, Ukraine
²E.O. Paton Electric Welding Institute of the NAS of Ukraine, Kazymyr Malevych St., Ukraine
³Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
⁴Institute of Physical Chemistry, NAS of Ukraine, Kyiv, Ukraine

*Corresponding Author: TI Mosiuk, Ukrainian State Mykhailo Drahomanov University, Kyiv, Ukraine.

Received: June 16, 2023; Published: June 27, 2023

Abstract

The results of studies of the electrical and optical characteristics of the original and irradiated by γ-quanta 𝐶𝑜60 of high-efficiency InGaN/GaN blue light-emitting diodes with quantum wells are presented. Possible mechanisms for the appearance of singularities in current-voltage characteristics at low temperatures (T ≤ 180 °K) are discussed. It was found that the process of radiative degradation of electroluminescence is accompanied by an increase in the carrier temperature Te and an increase in the activation energy of electroluminescence.

Keywords: InGaN/GaN; Electrical and Optical Characteristics; Irradiated by γ-quanta 𝐶𝑜60

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Citation

Citation: TI Mosiuk., et al. “Features of the Electrical and Optical Characteristics of the Original and Irradiated by γ-quanta 𝑪𝒐𝟔𝟎 InGaN/GaN LEDs with Quantum Wells". Acta Scientific Applied Physics 3.7 (2023): 03-08.

Copyright

Copyright: © 2023 TI Mosiuk., et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.